The properties of the Silicon Carbide crystal itself determine the elastic modulus and thermal expansion, and the thermal conductivity or thermal diffusivity of silicon carbides is significantly higher than that of other structural ceramics. SiC is prone to thermal shock damage due to its high elastic modulus and modest coefficient of thermal expansion. Thermal shock resistance is much lower than that of silicon nitride, but higher than that of structural zirconia ceramic.
The behaviour prior to thermal shock is also heavily influenced by the application. For example, highly quick temperature fluctuations may favour Si3N4 over Silicon Carbide, whereas moderate rates of temperature change may favour SiC because to its high thermal conductivity.
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