Gan Epitaxial Wafers
A wafer of semiconducting material formed through epitaxial growth, also referred to as an epi wafer, is used in photonics, microelectronics, spintronics, or photovoltaic applications. Gallium nitride (GaN), gallium arsenide (GaAs), or a mixture of the elements gallium, indium, aluminium, nitrogen, phosphorus, or arsenic make up the epitaxial layers. Some of the main benefits of Gan Epitaxial Wafers Substrate include high electron mobility, reduced switching losses, and fewer lattice mismatches, which are driving its usage in sectors including power electronics and optoelectronics.
